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magnetotransport). They will analyze device performance metrics such as output signal, switching speed, energy consumption, endurance, and scalability, and benchmark them against existing technologies (CMOS, MESO
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electric order parameters in multiferroic tunnel junctions (MFTJs) can unlock novel non-volatile, low-energy switching mechanisms. These emerging devices offer promising pathways toward next-generation
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to random bifurcations, in which the flow regime switches spontaneously from one type of behavior to another over a random time period. A paradigmatic example is the Von Karman flows, where large scale
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