1 switch PhD positions at CNRS

PhD – Energy efficient memory device based on innovative Mott material: nanofabrication process development, nanocharacterization and device qualification. (M/F)

CNRS | Villeneuve la Garenne, le de France | France | 22 days ago

of nanometer-scale Mott memories with switching energies in the femtojoule range. This will be obtained thanks to the combination of advanced nanofabrication and nanocharacterization techniques from IEMN, a