1 structural-optimization PhD positions at INSA Rennes in France

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PHD III-V/Si heterostructures: from optoelectronic properties to spin-polarised photodiodes.

INSA Rennes | Rennes, Bretagne | France | 12 days ago

[3] or GaAs [4] suffer from major defects. Due to its indirect band gap, Ge has limited absorption efficiency. GaAs structures, on the other hand, have been produced on expensive III-V substrates

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