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@plymouth.ac.uk) 3rd Supervisor: Prof. Shangming Zhou (shangming.zhou@plymouth.ac.uk ) Industrial Partner: This project is partly funded by Advanced Micro Devices (AMD) . AMD is a leading global semiconductor
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to be unconventional. I have projects available within the following research areas (at both Honours or PhD level): "Excitons and excitonic superfluidity in monolayer semiconductors" "Interplay of Dirac
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bandgap (Eg) semiconductor materials. Gallium oxide (Ga2O3) is a good example of such material – with Eg ~4.9 eV and high critical field which surpasses those of the mainstream semiconductors for power
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-insulating vertical GaN devices are a class of power semiconductor devices that utilize Gallium Nitride (GaN) material in a vertical configuration, offering significant advantages for high-voltage, high
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(Ga2O3) is an emerging ultrawide bandgap (UWBG, Eg=4.8–5.3 eV) semiconductor material, recently recognized as a highly promising for high-voltage and high-power applications. This material can enable solid
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) Previous experience with calorimeters and semiconductor-based detectors is considered an advantage; f) Communication skills, teamwork abilities, and strong analytical and synthesis skills. Specific
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in Chemistry, Physics or related subject. The selected PhD candidate will work with Prof Elena Besley on computational modelling of next-generation semiconductors made from atomically thin materials in
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institution. The Cluster of Excellence REC² offers (subject to the availability of resources) at the Faculty of Electrical and Computer Engineering, Institute of Semiconductors and Microsystem (IHM), Chair
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the following areas is a clear advantage: materials science, piezoelectric/ferroelectric materials, semiconductors, sputter deposition, materials' charac-terization (especially XRD, XPS and/or SEM/TEM), lab
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fabrication route, supported by Silson’s extensive expertise. This project offers a unique opportunity to work at the intersection of semiconductor fabrication, photonics, and THz technology, contributing