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. This PhD project aims at developing III-V semiconductor laser sources—especially frequency-comb lasers on InP substrates—and exploiting them for terahertz (THz) generation through optical beating
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: • Experience in the fabrication of semiconductor devices in a clean-room environment • Experience in nanocharacterization techniques • Knowledge of strongly correlated electronic systems / Mott materials Where
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at low cost. Whether for consumer applications below 220 V, or for electric or hybrid vehicles between 600 and 1200V, the epitaxial deposition of semiconductors such as GaN on large diameter substrates is
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