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Field
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Subject description The postdoctoral fellow will join a project focused on developing protein-based electronic components, with the ultimate goal of enabling in-cell production of semiconductor
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Maxwell or similar); select and characterize wide bandgap semiconductors and gate drivers; lab prototyping and testing. We welcome candidates with an entrepreneurial spirit and a strong motivation for start
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) To present and publish research results. Required Qualifications Postdoctoral candidates are required to hold a PhD degree in Electrical Engineering or related fields, with a strong theoretical and
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National Aeronautics and Space Administration (NASA) | Pasadena, California | United States | 2 months ago
but not limited to cutting-edge GaN, GaAs, InGaAs, InP, AlN, diamond, etc semiconductor technologies that potentially can be heterogeneously integrated with stable laser systems. The goal is to develop
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demonstrations and writing of detailed technical reports Essential & Desirable Criteria Essential A PhD in physics or engineering with a specialisation in optics or equally a PhD thesis submitted in same
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integrated research group, from semiconductor growth, materials analysis, device design, device fabrication and testing (electrical, reliability, thermal management) to packaging. A recent focus of our MOCVD
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are: A PhD degree (or a foreign degree deemed equivalent) in Chemistry, Physics, Materials Science, or a closely related field. Documented experience in the synthesis and purification of organic
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University of North Carolina at Chapel Hill | Chapel Hill, North Carolina | United States | 3 days ago
the design of defects in semiconductors. This position offers exciting opportunities to collaborate with experiment and theory groups. Candidates should be able to work both independently and collaboratively
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of technological business models in collaboration with our in-house innovation hub. Your profile The ideal candidate is expected to hold a PhD in Physics, Photonics, Electrical Engineering, or a related field, and
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transistors (HEMTs); (2) Low-power devices: novel transistors (tunneling field-effect transistors, and Non-silicon metal-oxide-semiconductor field-effect transistors, thin film transistors); (3) Light-emitting