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://nanomir.edu.umontpellier.fr/ ) is a world leader in GaSb-based mid-infrared (MIR) optoelectronic devices. The group specializes in the molecular beam epitaxy (MBE) growth of III-V semiconductors and operates 3 reactors, inc. a
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experience in single crystal growth (flux, vapor transport, floating-zone, unidirectional solidification, and electrochemical methods) or thin film growth (PLD, MBE, and CVD methods), crystal, and interface
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National Aeronautics and Space Administration (NASA) | Pasadena, California | United States | 3 months ago
engineering methods to fabricate advanced detector technologies and optical components. Research within the UV detector technology team has largely focused on the use of molecular beam epitaxy (MBE) for band
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research in wide bandgap semiconductors and is closely linked to the recent installation of a dual MBE cluster dedicated to III-nitride and III-oxide growth. Applicants must propose an innovative research
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guided by theoretical predictions and will combine magnetotransport measurements with material growth and characterization, including MBE and angle-resolved photoemission spectroscopy (ARPES). What We
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thin-film growth and characterization (oxides preferred), using sputtering (preferred), PLD, or MBE. Familiarity with synchrotron-based X-ray techniques and electron microscopy Knowledge of quantum
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), using sputtering (preferred), PLD, or MBE Proficiency in thin-film characterization tools such as XRD, AFM, SEM, XPS, TEM, etc. Experience with nanofabrication, particularly lithography and thin-film
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characterization: prior experience in single crystal growth (flux, vapor transport, floating-zone, unidirectional solidification, and electrochemical methods) or thin film growth (PLD, MBE, and CVD methods), crystal
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characterization: prior experience in single crystal growth (flux, vapor transport, floating-zone, unidirectional solidification, and electrochemical methods) or thin film growth (PLD, MBE, and CVD methods), crystal