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://nanomir.edu.umontpellier.fr/ ) is a world leader in GaSb-based mid-infrared (MIR) optoelectronic devices. The group specializes in the molecular beam epitaxy (MBE) growth of III-V semiconductors and operates 3 reactors, inc. a
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, molecular beam epitaxy an excellent command of written and spoken English good interpersonal, communication, organizational and problem-solving skills the ability to work independently and in a team the
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National Aeronautics and Space Administration (NASA) | Pasadena, California | United States | 3 months ago
engineering methods to fabricate advanced detector technologies and optical components. Research within the UV detector technology team has largely focused on the use of molecular beam epitaxy (MBE) for band
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growth experience in material growth using molecular beam epitaxy or metal organic chemical vapor deposition, semiconductor device fabrication will be given priority. Candidate who is interested in one