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- Slovak University of Agriculture in Nitra
- Institute of Electrical Engineering, Slovak Academy of Sciences
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activities. Key Responsibilities: Curriculum Development and Teaching: Design and deliver foundational economic courses. Create practical learning activities, such as case studies and simulations, that bridge
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Institute of materials and machine mechanics Slovak academy of sciences | Slovakia | about 1 month ago
). • Participation in end-effector development (mechanical integration, gripping/positioning, F/T sensing; support in choosing tip geometry, stud magazine, and interfaces to the vacuum chamber). • Co-development
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systems is becoming more important in various scientific areas, e.g. in the development of new materials for data storage, light-emitting diodes, or anticancer metallodrugs. The main goal of the thesis is
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Framework Programme? Not funded by a EU programme Is the Job related to staff position within a Research Infrastructure? No Offer Description Development of an AI-Driven Interoperable Precision Irrigation
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územný rozvoj a regionálnu konkurencieschopnosť vybraných regiónov SR Evaluation of the Efficiency of Land Use Instruments Using Economic Determinants to Promote Sustainable Development and Regional
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Framework Programme? Not funded by a EU programme Is the Job related to staff position within a Research Infrastructure? No Offer Description Development and validation of an adaptive quantitative model
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Administration, Faculty of european studies and regional development Slovak university of agriculture in Nitra Jazyk/language: slovenský/anglický// slovak/english
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Main ideas of the proposed dissertation topic: Determination of the mean tool life for ultrasonic wire embedding into a base substrate through calculation and experimentation. Development of equations
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Development Research Field Geography Demography Researcher Profile First Stage Researcher (R1) Positions PhD Positions Application Deadline 31 May 2026 - 23:59 (Europe/Bratislava) Country Slovakia Type
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-state diodes and transistors with unprecedented blocking voltages, far exceeding the capabilities of modern technologies based on SiC and GaN WBG semiconductors. Ga2O3 devices can thus enable development