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improvement of power electronics represents significant energy savings and reduction of carbon emissions. One of the ways to achieve higher efficiency of power electronic devices is the use of new (ultra) wide
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. The combination of GaN’s wide bandgap, high electron mobility, and semi-insulating properties results in improved performance, making vertical GaN devices an ideal choice for next-generation power systems. In
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(Ga2O3) is an emerging ultrawide bandgap (UWBG, Eg=4.8–5.3 eV) semiconductor material, recently recognized as a highly promising for high-voltage and high-power applications. This material can enable solid
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semiconductors such as GaN and SiC and to enable reliable operation at voltages >6 kV, where suitable alternative is currently unavailable. Such devices are expected to find applications in high-efficiency power
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1 Apr 2026 Job Information Organisation/Company Institute of Electrical Engineering, Slovak Academy of Sciences Research Field Physics » Solid state physics Researcher Profile First Stage Researcher
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27 Jan 2026 Job Information Organisation/Company Institute of Geography, Slovak Academy of Sciences Research Field Geography Researcher Profile Recognised Researcher (R2) Established Researcher (R3