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frequency, and automotive electronics. Compound semiconductors based on III-N materials (GaN, AlN, InN) and its combinations facilitate preparation of countless heterostructures showing quantum effects. In
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third of all produced electricity passes through power electronic devices at some stage before consumption with the predicted increase up to 80 % for the next decade. Therefore, even small efficiency
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for power electronics, RF amplifiers, and motor drives. By incorporating vertical structures, these devices achieve high current handling capabilities while maintaining efficient thermal management
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heterogeneous AOP catalyst for the degradation of micropollutants in water -- Important dates: 24th April 2026: Deadline for submitting pre-application 1st May 2026: Results of the pre-selection (via email) 4th
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email to: andrej.herzan@savba.sk Where to apply E-mail andrej.herzan@savba.sk Requirements Research FieldPhysicsEducation LevelMaster Degree or equivalent Skills/Qualifications Essential skills and
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of Ga2O3 and development of related electronic devices for power applications. The aim of the work will be the study and detailed characterization of the electrical breakdown of transistors and diodes based
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email to: andrej.herzan@savba.sk Where to apply E-mail andrej.herzan@savba.sk Requirements Research FieldPhysicsEducation LevelMaster Degree or equivalent Skills/Qualifications Essential skills and
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enjoy interesting work in the University's growing international research community. The department provides basic research infrastructure (office, computer, software...). Students also participate at a
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international cooperation Eligibility criteria Obtained master’s degree or equivalent at the time of entrance examination. Complete submission of an electronic registration form for doctoral studies via
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or equivalent at the time of entrance examination Complete submission of an electronic registration form for doctoral studies via the academic information system of the corresponding university Selection process