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in RF systems, radar, and space-related research. You will play a key role in the design, development, and validation of an L-band phased-array breadboard system for detecting plasma disturbances
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-channel GaN RF HEMTs, as well as state-of-the-art GaN power devices. You will have access to an extensive electrical device testing suite available in Bristol, and will be supported by our 35-member
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including finite element simulations. You will have the opportunity to develop and test models for unique device structures including graded channel/multi-channel GaN RF HEMTs, as well as state-of-the-art GaN
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fabricate nanoscale electrical test structures (e.g., photolithography, e-beam lithography) Design, test, and characterize radiofrequency (RF) circuitry and measurement approaches Analyze and interpret data
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to make a difference. If this sounds like you, you’ve come to the right place! The successful candidates are expected to perform the following tasks: Conduct research on RF threat modelling and
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to specifically highlight in their applications how they fulfil the essential criteria for the post, listed below. Key Duties & Responsibilities The post holder is required to: Develop RF circuits and microwave
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superconducting RF (SRF) technology. Since then, a transformative SRF approach using Nb₃Sn has emerged, offering performance comparable to niobium while enabling operation at higher temperatures—potentially
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the terms laid down in the Statute of the Research Fellow, approved by Law no. 40/2004 , 18 August, as it stands, we announce the launching of a call for awarding a post-doctoral research fellowship (RF), in
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device technology. The CDTR leads numerous UK and international strategic programmes on power and RF electronics, including the European Innovation Accelerator, part of Horizon Europe, programme CoolbrAIn
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, engineers and external stakeholders conduct applied research in advanced RIS, antenna and multi-antenna systems design, implement and evaluate antenna, RIS or RF system prototypes perform experimental testing