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, orbital Rashba-Edelstein length, decoherence length) in these multilayers and at their interfaces. We will design on 200 nm or less magnetic memory elements made by e-beam lithography to achieve the proof
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-on prototyping: modelling, coding, circuits, measurements and validation on real data. Applications will be reviewed on a rolling basis to match the ENACT timeline, so early applications are strongly encouraged
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degrees of understanding in the mathematical / mathematized science. Application deadline: April 10 For updates, please also check https://sharedocs.huma-num.fr/wl/?id=vMOHFDMLNLGROARW83MOznG7tcKvBd2u
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