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(R1) Positions PhD Positions Application Deadline 30 Apr 2026 - 23:59 (Europe/Bratislava) Country Slovakia Type of Contract Temporary Job Status Full-time Hours Per Week 37.5 Offer Starting Date 1 Sep
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to be unconventional. I have projects available within the following research areas (at both Honours or PhD level): "Excitons and excitonic superfluidity in monolayer semiconductors" "Interplay of Dirac
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@plymouth.ac.uk) 3rd Supervisor: Prof. Shangming Zhou (shangming.zhou@plymouth.ac.uk ) Industrial Partner: This project is partly funded by Advanced Micro Devices (AMD) . AMD is a leading global semiconductor
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30 Mar 2026 Job Information Organisation/Company INSA Rennes Department Material Science and Engineering Research Field Other Researcher Profile First Stage Researcher (R1) Positions PhD Positions
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(R1) Positions PhD Positions Application Deadline 30 Apr 2026 - 23:59 (Europe/Bratislava) Country Slovakia Type of Contract Temporary Job Status Full-time Hours Per Week 37.5 Offer Starting Date 1 Sep
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the Condensed Matter and Electroactive Systems team (Rennes). The PhD will be supervised by Cyril Poriel (CNRS Research Director) and Cassandre Quinton (CNRS Researcher). Organic electronics (OE) starts to play a
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(R1) Positions PhD Positions Application Deadline 30 Apr 2026 - 23:59 (Europe/Bratislava) Country Slovakia Type of Contract Temporary Job Status Full-time Hours Per Week 37.5 Offer Starting Date 1 Sep
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(R1) Positions PhD Positions Application Deadline 30 Apr 2026 - 23:59 (Europe/Bratislava) Country Slovakia Type of Contract Temporary Job Status Full-time Hours Per Week 37.5 Offer Starting Date 1 Sep
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SD-25045 – PHD IN HONG-OU-MANDEL INTERFERENCE AND ENTANGLEMENT WITH COLOUR CENTRES IN SILICON CAR...
aspects. Quantum colour centres in in wide bandgap semiconductors have recently emerged as a promising platform, since they can incorporate quantum systems, which can be scaled up by industrial processing
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in Chemistry, Physics or related subject. The selected PhD candidate will work with Prof Elena Besley on computational modelling of next-generation semiconductors made from atomically thin materials in