M/F Wide-Field Coherent Raman Microscopy: Application to Semiconductor Imaging

Updated: 3 days ago
Location: Marseille 13, PROVENCE ALPES COTE D AZUR
Job Type: FullTime
Deadline: 22 Apr 2026

2 Apr 2026
Job Information
Organisation/Company

CNRS
Department

Institut Fresnel
Research Field

Engineering
Physics
Technology
Researcher Profile

First Stage Researcher (R1)
Application Deadline

22 Apr 2026 - 23:59 (UTC)
Country

France
Type of Contract

Temporary
Job Status

Full-time
Hours Per Week

35
Offer Starting Date

1 Sep 2026
Is the job funded through the EU Research Framework Programme?

Horizon 2020
Is the Job related to staff position within a Research Infrastructure?

No

Offer Description

The Fresnel Institute has developed a wide-field coherent anti-Stokes Raman scattering (CARS) imaging technique using speckle illumination [1]. This method employs low-repetition-rate lasers (∼100 kHz) with high pulse energy (microjoule range) to generate random speckle patterns for both the pump and Stokes beams. By rapidly varying the speckle illumination of the pump beam, the CARS signal generation can be rendered incoherent, thereby achieving a depth of field comparable to that of microscopes using incoherent light. This approach enables video-rate CARS chemical imaging over fields of view exceeding 200 µm. The technique can also be extended to achieve optical sectioning at the micron scale and super-resolution imaging (twice the diffraction limit). This is accomplished by acquiring sequential speckle illumination images and processing them using Random Illumination Microscopy (RIM).
This wide-field CARS chemical imaging technique has been successfully applied to biological samples using near-infrared lasers in the 700–900 nm range.

The goal of this research is to extend wide-field CARS chemical imaging techniques to the infrared domain, specifically for pump and Stokes beams with wavelengths above 1.4 µm. In this spectral range, it becomes possible to image semiconductor components.
Semiconductor materials exhibit vibrational modes that depend on their crystal lattice and crystallographic symmetry. Imaging these modes over large fields should reveal mechanical stresses, doping effects, and local temperature variations.
Thus, this project aims to develop a wide-field coherent Raman microscope capable of imaging centimeter-scale areas of semiconductor materials.

[1] Fantuzzi, E.M., Heuke, S., Labouesse, S. et al. Wide-field coherent anti-Stokes Raman scattering microscopy using random illuminations. Nat. Photon. 17, 1097–1104 (2023). https://doi.org/10.1038/s41566-023-01294-x

The project is part of an H2020/ERC research program


Where to apply
Website
https://emploi.cnrs.fr/Offres/CDD/UMR7249-HERRIG-027/Default.aspx

Requirements
Research Field
Engineering
Education Level
PhD or equivalent

Research Field
Physics
Education Level
PhD or equivalent

Research Field
Technology
Education Level
PhD or equivalent

Languages
FRENCH
Level
Basic

Research Field
Engineering
Years of Research Experience
None

Research Field
Physics
Years of Research Experience
None

Research Field
Technology
Years of Research Experience
None

Additional Information
Eligibility criteria

The research program will focus on three main objectives:
1. Experimental Development: Design and implement a wide-field coherent Raman imaging system.
2. Validation: Demonstrate the technique's effectiveness by imaging the 520 cm⁻¹ silicon Raman line.
3. Exploration: Investigate the vibrational modes of other semiconductor materials (e.g., h-BN, MoS₂, GaN).
Expertise in:
- Experimental optics
- Data processing
are expected


Website for additional job details

https://emploi.cnrs.fr/Offres/CDD/UMR7249-HERRIG-027/Default.aspx

Work Location(s)
Number of offers available
1
Company/Institute
Institut Fresnel
Country
France
City
MARSEILLE 13
Geofield


Contact
City

MARSEILLE 13
Website

http://www.fresnel.fr

STATUS: EXPIRED

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