M/F CDD Post doc - Modeling and circuit exploration based on multiferroic devices

Updated: 7 days ago
Location: Ecully, RHONE ALPES
Job Type: FullTime
Deadline: 17 Apr 2026

28 Mar 2026
Job Information
Organisation/Company

CNRS
Department

Institut des Nanotechnologies de Lyon
Research Field

Engineering
Physics
Technology
Researcher Profile

First Stage Researcher (R1)
Application Deadline

17 Apr 2026 - 23:59 (UTC)
Country

France
Type of Contract

Temporary
Job Status

Full-time
Hours Per Week

35
Offer Starting Date

1 Jun 2026
Is the job funded through the EU Research Framework Programme?

Not funded by a EU programme
Is the Job related to staff position within a Research Infrastructure?

No

Offer Description

context:
The rapid expansion of Artificial Intelligence has generated a global demand for computing systems capable of handling massive data flows while drastically reducing energy consumption. Within France's national PEPR SPIN program, our team investigates innovative spin-based and multiferroic circuit and device concepts aimed at enabling radically energy-frugal information processing.
Recent advances in spintronics and ferroelectrics show that combining magnetic and electric order parameters in multiferroic tunnel junctions (MFTJs) can unlock novel non-volatile, low-energy switching mechanisms. These emerging devices offer promising pathways toward next-generation neuromorphic and energy-efficient hardware architectures. Early concepts – such as Intel's MESO logic gate – illustrate the transformative potential of multiferroic technologies and motivate deeper scientific exploration.
The MULTISPIN project aims to advance this field by establishing predictive models and assessing the circuit-level behavior of MFTJ devices based on van der Waals (vdW) two-dimensional (2D) materials. Their intrinsic tunability - enabling electrical control of magnetism, atomically sharp interfaces, and strong coupling - provides a rich foundation for device modelling and circuit innovation.

Job description:
We are seeking a postdoctoral researcher with solid expertise in device physics modelling, compact model development, and/or circuit simulation. The successful candidate will:
• Develop physical and compact models describing the magnetoelectric and memristive behaviour of vdW-based MFTJs.
• Implement these models in standard circuit simulation frameworks.
• Explore the behavior of small circuits (e.g., elementary logic gates, switching cells, simple memory elements) incorporating MFTJs.
• Collaborate closely with experimental partners to validate and refine models using measured data.
This position provides an opportunity to contribute to cutting-edge research at the interface of condensed-matter physics, materials science, and device/circuit modeling, within an international, multidisciplinary environment. Candidates from all countries and backgrounds are strongly encouraged to apply.

• Develop physical and compact models describing the magnetoelectric and memristive behaviour of vdW-based MFTJs.
• Implement these models in standard circuit simulation frameworks.
• Explore the behavior of small circuits (e.g., elementary logic gates, switching cells, simple memory elements) incorporating MFTJs.
• Collaborate closely with experimental partners to validate and refine models using measured data.

The Institut des Nanotechnologies de Lyon (INL) aims to develop multidisciplinary technological research in the field of micro and nanotechnologies and their applications. The research carried out ranges from materials to systems. The laboratory is supported by Lyon's NanoLyon technology platform.
The areas of application cover major economic sectors: the semiconductor industry, information technologies, life and health technologies, energy and the environment.
The laboratory is multi-site, with locations on the Ecully and Lyon-Tech La Doua campuses. It employs around 200 people, including 121 permanent staff. The INL is a major player in the Research and Teaching Cluster.
This position is located in an innovative environment, at the cutting edge of future technologies, in strategic application sectors.


Where to apply
Website
https://emploi.cnrs.fr/Offres/CDD/UMR5270-SYLGON-070/Default.aspx

Requirements
Research Field
Engineering
Education Level
PhD or equivalent

Research Field
Physics
Education Level
PhD or equivalent

Research Field
Technology
Education Level
PhD or equivalent

Languages
FRENCH
Level
Basic

Research Field
Engineering
Years of Research Experience
None

Research Field
Physics
Years of Research Experience
None

Research Field
Technology
Years of Research Experience
None

Additional Information
Eligibility criteria

- Emerging technologies modeling,
- circuit simulation and design.


Website for additional job details

https://emploi.cnrs.fr/Offres/CDD/UMR5270-SYLGON-070/Default.aspx

Work Location(s)
Number of offers available
1
Company/Institute
Institut des Nanotechnologies de Lyon
Country
France
City
ECULLY
Geofield


Contact
City

ECULLY
Website

http://inl.cnrs.fr/

STATUS: EXPIRED

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