Research Associate

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RESEARCH ASSOCIATE

POSITION SUMMARY:

We are seeking a highly skilled Research Associate to lead advanced GaN and III‑nitride epitaxial growth activities in support of next‑generation microLED technologies. The successful candidate will play a central role in commissioning and operating a CVD/MOCVD reactor, developing GaN nanowire and epitaxial overgrowth processes, and applying advanced materials characterization to guide technology development.

This position involves close collaboration with an industry partner and focuses on translational research that bridges fundamental materials science and commercial microLED device requirements. The role requires strong experimental skills, technical leadership, and the ability to integrate industrial considerations into research planning.

RESPONSIBILITIES:

The tasks of this position include but are not limited to the description below:

• Establish research protocols and operational methodologies that enable reliable CVD/MOCVD operation for GaN epitaxial growth investigations.

• Design and apply systematic diagnostic and calibration approaches to maintain reactor stability and reproducibility during experimental studies.

• Conduct GaN and InGaN epitaxial growth experiments on sapphire substrates to evaluate material quality and process performance.

• Oversee the evaluation and interpretation of epitaxial film properties using X‑ray diffraction (XRD) and related characterization tools.

• Conduct collaborative research on GaN nanowire growth using metal‑coated substrates, encompassing substrate preparation strategies, optimization of metal layer properties, and literature‑informed replication of established growth approaches. Apply iterative process refinement to investigate the effects of growth conditions on nanowire uniformity, density, and morphology.

• Advance the understanding of GaN epitaxial overgrowth on nanostructured templates by studying defect mitigation and coalescence phenomena, and by developing growth strategies that enable high‑structural‑quality, device‑relevant epitaxial films.

• Implement advanced materials characterization approaches, in collaboration with external facilities, to investigate the structural, optical, and electrical properties of GaN‑based materials. Interpret experimental data to guide epitaxial process development, and maintain detailed research records and technical documentation.

• Engage in ongoing collaborative exchanges with an industrial research partner to align experimental objectives with application‑relevant considerations, and contribute to knowledge transfer efforts that facilitate translation of research outcomes toward future deployment

• Document procedures, methodologies, and results in technical reports and publications

QUALIFICATIONS:

• Ph.D. degree in Microelectronics Engineering, Optoelectronics, Electrical Engineering, Materials Science, or a related field.

• Expertise with GaN and III‑nitride epitaxy, including binary (AlN, GaN, InN) and ternary (AlGaN, InGaN) materials.

• Experience in epitaxial process optimization, including Doping control (n‑type, p‑type, semi-insulating layers)

• Experience with the design and development of device-relevant epitaxial structures such as LEDs, Photodiodes, Solar cells, HEMTs etc.

• Proficiency with key materials and device characterization techniques (i.e. X-ray diffraction (XRD), Photoluminescence (PL), Hall effect measurements)

• Experience analyzing crystalline, optical, and electrical properties of GaN materials and devices.

• Familiarity with SEM/TEM analysis

• Strong analytical and problem-solving skills.

• Excellent communication and teamwork abilities.

• Ability to work independently and manage multiple tasks effectively.

Hiring Unit:

Department of Materials Engineering

Number of Positions:

1

Supervisor:

Professor Nate Quitoriano

Total Hours Per Week:

35 (full time)

Hourly Salary:

$33.96

Location:

McGill Downtown Campus

« Connaissance du français et de l'anglais: L'Université McGill est une université de langue anglaise où les tâches quotidiennes peuvent nécessiter une communication verbale et écrite en anglais.  Le niveau d’anglais requis pour ce poste a été déterminé comme étant de niveau #4 (qualificatif) sur une échelle de 0-4.»

“Knowledge of French and English: McGill University is an English-language university where day to day duties may require English communication both verbally and in writing. The level of English required for this position has been assessed at a level #4 (qualifier) on a scale of 0-4.”

In accordance with Canadian and Quebec law, the present offer is conditional upon your obtaining the appropriate work authorization from any or all of the following as applicable: Citizenship & Immigration Canada, Immigration Quebec and Human Resources & Skills Development Canada (HRSDC).

Hourly Salary:

$33.96

Hours per Week:

35 (Full time)

Location:

Wong Building

Supervisor:

Associate Professor

Position Start Date:

2026-01-29

Position End Date:

2026-06-30

Deadline to Apply:

2026-02-09

This position is covered by the Association of McGill University Research Employees (AMURE) collective agreement.

McGill University hires on the basis of merit and is strongly committed to equity and diversity within its community. We welcome applications from racialized persons/visible minorities, women, Indigenous persons, persons with disabilities, ethnic minorities, and persons of minority sexual orientations and gender identities, as well as from all qualified candidates with the skills and knowledge to productively engage with diverse communities. McGill implements an employment equity program and encourages members of designated groups to self-identify. Persons with disabilities who anticipate needing accommodations for any part of the application process may contact, in confidence, accessibilityrequest.hr@mcgill.ca .