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Funded PhD studentship in AI-assisted materials discovery at the UK National Epitaxy Facility School of Electrical and Electronic Engineering PhD Research Project Competition Funded UK Students
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main objective of this thesis will be the investigation and optimisation of epitaxial growth of thin Ga₂O₃ layers, and related materials such as (AlₓGa₁₋ₓ)₂O₃, on foreign substrates (Al₂O₃, SiC, Si
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comprehensive training in IEMN's cleanroom facilities. The cleanroom work will rely on process modules including molecular beam epitaxy (MBE), dielectric deposition (PECVD and/or sputtering), optical lithography
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group, we synthesise these functional nanomaterials from the bottom-up, using protocols of molecular beam epitaxy and on-surface supramolecular chemistry. We study these systems by means
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-reciprocity of spin waves Angular Momentum of Magnons Magnetically doped Transition Metal Dichalcogenide Thin Films via Molecular Beam Epitaxy Modeling of a magnonic diode based on spin-wave non-reciprocity in
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reproducible processes, which is rarely achieved in practice. In this context, we propose to exploit the potential of molecular beam epitaxy (MBE) assisted by coupled in situ and real-time characterization
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technologies. To achieve this goal, you will use state-of-the-art experimental techniques in our molecular beam epitaxy and ellipsometry labs. About the project In this PhD project you will be investigating
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grow new materials by molecular beam epitaxy, or create heterostructures of materials by exfoliating and stacking atomically thin layers from crystals, and fabricate nanoscale electronic devices
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contribute in particular to the following areas: • the growth, by molecular beam epitaxy (MBE), of 2D material layers and their van der Waals heterostructures, • characterisation of the fabricated materials
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involves regrowing a semiconductor layer to form a high-quality gate channel, typically using selective epitaxial growth. The configuration of the semi-insulating vertical GaN transistor designed by us is