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- Institute of Electrical Engineering, Slovak Academy of Sciences
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of the work deals with the growth and investigation of epitaxial III-N quantum structures prepared by metal-organic chemical-vapor deposition (MOCVD). GaN, as a constituting member of III-N family, is a most
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, TPD), and their activity, selectivity and stability evaluated using electroanalytical and electrochemical methods (DEMS). 3) The subject of the proposed PhD studies is investigation of the epitaxial
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you to apply. In this call, we are particularly recruiting PhD candidates for the following research topics: Project A: Epitaxy and nanofabrication of III-V semiconductor emitters in nanocavities
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Environmental Physics 2. Solid State Physics Electron Microscopy Semiconductor Epitaxy Semiconductor Optics Surface Physics 3. Theoretical Physics Complex Systems Solid-State Theory Semiconductor Physics