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RAP opportunity at National Institute of Standards and Technology NIST Flexible Electronics Reliability Location Material Measurement Laboratory, Applied Chemicals and Materials Division
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RAP opportunity at National Institute of Standards and Technology NIST Modeling for Quantitative Scanning Electron Microscopy Location Physical Measurement Laboratory, Microsystems and
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RAP opportunity at National Institute of Standards and Technology NIST Microwave Materials for High-Speed Microelectronics Location Communications Technology Laboratory, Radio Frequency
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NIST only participates in the February and August reviews. Low-dimensional electronic materials, including few-atoms thick 2D semiconductors, topological insulators and superconductors, have
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electron excited X-ray microanalysis has been the electron probe microanalyzer with wavelength dispersive spectrometer (EPMA/WDS). On the other hand, energy dispersive X-ray microanalysis is often viewed as
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RAP opportunity at National Institute of Standards and Technology NIST Compressive Sensing Methods for Electron Microscopy and Microanalysis Location Material Measurement Laboratory, Materials
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RAP opportunity at National Institute of Standards and Technology NIST Four-Dimensional (4D) Scanning Transmission Electron Microscopy Location Material Measurement Laboratory, Materials
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NIST only participates in the February and August reviews. The future of nanoelectronic technologies requires new device concepts and novel materials. The electronic (band) structure and energy band
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in biomanufacturing and personalized medicine. We are developing new electronics techniques that leverage the field effect, and optomechanical interferometric methods for the on-chip measurements
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Bias-induced Strain Mapping of Electronic and Energy Materials in an Atomic Force Microscope NIST only participates in the February and August reviews. Strain is induced when an electric field is