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modulators and detectors Exploration of novel device concepts, materials, and integration flows (e.g. Ge, GeSi, IIIV, BTO, LNO, organic materials) Targeting ultra‑low power (< 1 pJ/bit) and/or ultra‑high
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, 3D-integrated compute systems in which logic, memory, power delivery, and interconnect are co-designed across heterogeneous technology tiers. Realizing CMOS 2.0 in silicon depends on tightly coupling
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