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@nist.gov 301.975.3958 Description Scanning electron microscopy (SEM) is used for metrology of nanometer-scale features in semi-conductor electronics applications and for emerging nanotechnologies. SEM
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position focuses on developing measurement methodologies to characterize mechanical properties and deformation behavior in advanced packaging applications. It involves: Design, application, and evaluation
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quantities for meaningful comparison. We lead the development of innovative standards and novel calibrations to achieve accuracy in localization microscopy [1, 2], with applications ranging from nanoplastic
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NIST only participates in the February and August reviews. The Alternative Computing Group at NIST has an ongoing program developing new metrologies to support emerging information processing
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“phonon laser,” for which we are interested in developing applications. We are now exploring high-contrast gratings with a 2D periodicity, and active-cavity devices based on these structures. In related
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attracted considerable attention for potential application in nanoscale devices, including beyond-CMOS electronics, quantum computers, chemical sensors, photodetectors, etc. Prospective advantages over
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christina.hacker@nist.gov 301.975.2233 Description Incorporation of novel materials, such as molecular layers or 2D layers, into electronic paradigms enables transformative potential in applications ranging from
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the fundamental structure-property and processing-property relations that will enable these materials to provide the necessary performance in the wide spectrum of applications envisioned. For example, quantitative
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, health care, and nuclear security applications. No instrument today directly measures all decays in a sample with sufficient energy resolution to uniquely identify each radionuclide. NIST is developing a 4
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@nist.gov 917.913.7268 Description This research opportunity focuses on precisely controlled quantum systems of neutral atoms in microscale optical potentials, for applications in quantum simulation