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period to compensate for compressive stress in the InGaAs layers. The final approach concerns the development of ultra-fast PIN photodiodes optimized for operation at 1 µm, using an absorption layer based
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available1Company/InstituteIETR Lab of CNRSCountryFranceCityRennesGeofield Contact City Rennes Website https://cnrs.fr Street bat. 11D, Campus de Beaulieu Postal Code 35000 STATUS: EXPIRED X (formerly Twitter
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CRISPR knock-in permutations of their coding regions and analyze the resulting muscle phenotypes by confocal microscopy. 2. Manipulate the temporal dynamics of selected actin regulators to test their actin
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