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Post-Doctoral Associate in Sand Hazards and Opportunities for Resilience, Energy, and Sustainability
-Lagrangian (CEL), Material Point Method (MPM), or advanced Finite Element Methods). Physical modeling of tunnel excavation and ground response (e.g., geotechnical centrifuge testing, lab-scale TBM experiments
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(MPM), or advanced Finite Element Methods). Physical modeling of tunnel excavation and ground response (e.g., geotechnical centrifuge testing, lab-scale TBM experiments). Probabilistic and reliability
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bottom-up synthesis. You will work in the laboratory for Quantum Magnetism fully equipped with low-temperature, high magnetic field scanning tunneling microscopy (STM) and tuning fork atomic force
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Hypersonic Aerodynamics. The successful candidate will play a key role in developing and advancing new measurement systems for the departments Hypersonic blowdown wind tunnel, and conducting cutting-edge
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positions to work in experimental condensed matter physics with focus on angle-resolved photoemission (ARPES) and scanning tunneling spectroscopy (STS/STM) based studies of topological, strongly correlated
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reactions on well-defined surfaces under ultrahigh vacuum conditions using scanning tunneling microscopy and advanced spectroscopic techniques. The successful Candidate will contribute to a project funded by
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and topology (e.g. tunnels, stairways) in closed spaces, facilitating navigation for teams such as firefighters in complex, hazardous environments. The position will be hosted in the Department
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positions to work in experimental condensed matter physics with focus on angle-resolved photoemission (ARPES) and scanning tunneling spectroscopy (STS/STM) based studies of topological, strongly correlated
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technological solutions. M2 hosts one of Sweden’s most advanced simulator centers for ship navigation and propulsion, alongside world-class laboratories for combustion engineering and wind tunnel testing. M2
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: heterojunction bipolar transistors, high electron mobility transistors (HEMTs); (2) Low-power devices: novel transistors (tunneling field-effect transistors, and Non-silicon metal-oxide-semiconductor field-effect