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to reliable manufacturing of the next generation computing devices. Computational imaging methods such as coherent diffractive imaging, Fourier ptychography, structured illumination techniques, and other super
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NIST only participates in the February and August reviews. The Applied Economics Office (AEO) at NIST works closely with the NIST Community Resilience Program (CRP) and external collaborators
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RAP opportunity at National Institute of Standards and Technology NIST Mathematical Modeling of Magnetic Systems Location Information Technology Laboratory, Applied and Computational Mathematics
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RAP opportunity at National Institute of Standards and Technology NIST Applied Optimization and Simulation Location Information Technology Laboratory, Applied and Computational Mathematics
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RAP opportunity at National Institute of Standards and Technology NIST Lightweight Cryptography for Resource Constrained Applications Location Information Technology Laboratory, Computer
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RAP opportunity at National Institute of Standards and Technology NIST Magnetic Resonance in Industrial Applications Location Physical Measurement Laboratory, Applied Physics Division opportunity location 50.68.62.C0945 Boulder, CO NIST only participates in the February and August...
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are critical for attaining measurement quality objectives and meeting the needs of the health and medical community. The isotope metallomics program at NIST focuses on analytical method development, rapid
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, or techniques that will speed up analysis times, provide increased information to the chemist, and/or simplify data interpretation while enhancing data quality. One of the goals of the forensic program at NIST is
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variables. Computer-controlled equipment is available for alternating-current magnetic-susceptibility measurements as a function of frequency, temperature, and magnetic field. An automated vibrating sample
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measurement to support a DARPA program on “Tailorable Composite Feedstock and Forming”. This project will involve dc to 110 GHz complex permittivity and permeability characterization with on-wafer techniques