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NRC Programs at National Institute of Standards and Technology This page provides specific information related to the NRC Research and Fellowship Program at NIST. Use the navigation on the left
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of the semiconductor industry in the US. Numerous gases are used in the production of semiconductor chips, and the accurate metering of these gases into the process chamber is critical for maximizing device throughput
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RAP opportunity at National Institute of Standards and Technology NIST MEMS-Based Scanning Probe Microscopy Location Physical Measurement Laboratory, Engineering Physics Division opportunity location 50.68.31.B7380 Gaithersburg, MD NIST only participates in the February and August...
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requires expertise in Computer Science, Statistics, or a similar field. Experience with machine learning, genetics, and/or bio-informatics is strongly preferred. The postdoc will work together and within a
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achieved through controlled polymerization methods. The polymers will then be subjected to a variety of conditions, such as degradation, and undergo quantitative analysis including rheology, DSC
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NIST only participates in the February and August reviews. Self-assembly methods have the potential to integrate heterogeneous nanoscale objects to create multifunctional systems, with applications
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development will be used in numerical models to understand and predict interphase development from fundamental thermodynamic and kinetics principles. key words Carbon nanotubes; Coatings; Interfaces
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NIST only participates in the February and August reviews. New measurement methods and tools are required for biology to emerge fully as an enabling, practical platform for engineering. The Cellular
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attracted considerable attention for potential application in nanoscale devices, including beyond-CMOS electronics, quantum computers, chemical sensors, photodetectors, etc. Prospective advantages over
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without expensive die tryouts and new model development costs. In addition, CP-FEM (crystal plasticity-finite element method) modeling allows development of constitutive laws for new materials based