177 evolution-"https:"-"https:"-"https:"-"https:"-"https:"-"https:"-"CEA-Saclay" positions at NIST
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activated defect evolution, material damping, and temperature dependence of physical properties of piezoelectric materials. During the past two decades, innovative single-crystalline piezoelectric materials
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reactions involving residual vacuum gases, (2) determinations of the outgassing rate of water vapor and other molecules from surfaces, (3) development of holographic microscopy for critical defect inspection
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development of RF MEMS/NEMS resonators. Several resonator geometries are being developed that combine low-loss mechanical design, unique materials, and electrostatic, electrothermal, and piezoelectric actuation
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, commercial qNMR standards have only appeared in the last few years. We seek proposals related to the development of high-accuracy methods or standard reference materials for the analysis of gas-phase mixtures
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-currents. Ultimately, the goal of this project is to better understand the interactions between spins and superconductors that will allow the development of nanoscale hybrid memory elements that can be
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Description Euv lithography has become a primary manufacturing tool for the semiconductor industry, but new challenges in the development and characterization of EUV resists have emerged as the technology
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and human breath). This project focuses on the development of advanced sensing components-individually or within sensor systems-that can help to push performance to new levels, thereby impacting
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interactions with the electrolyte as a function of applied potential. Despite more than a century of model development, much is still unknown about even single-crystal interfaces. We combine spectroscopic and
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, while maintaining traceability to the SI with low overall uncertainty (~ 0.1 %). Longer-term plans include development of complementary absolute activity methods, such as coincidence counting and defined
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quantities for meaningful comparison. We lead the development of innovative standards and novel calibrations to achieve accuracy in localization microscopy [1, 2], with applications ranging from nanoplastic