Sort by
Refine Your Search
-
RAP opportunity at National Institute of Standards and Technology NIST Developing Novel Additive Manufacturing Processing Methods Location Material Measurement Laboratory, Materials Science and
-
RAP opportunity at National Institute of Standards and Technology NIST Nanomagnetism-Dynamics Location Physical Measurement Laboratory, Nanoscale Device Characterization Division opportunity
-
301.975.6050 Jan Obrzut jan.obrzut@nist.gov 301.975.6845 Description As part of a collaborative NIST-wide program involving structural characterization, modeling, and high-throughput microwave measurement, we
-
manufacturing of metal components through laser powder bed fusion have been increasingly embraced across a variety of industries and applications. But, broader adoption of this manufacturing technology—especially
-
of aqueous chemical models, incorporated into computer codes, for both pure and applied research that include industrial chemistry, chemical engineering, water treatment, hydrometallurgy, toxicology, medical
-
catalytic turnover. Integrative modeling and machine learning have the promise of establishing new tools for combining computational and experimental data from HDX-MS and NMR to explain the dynamics and
-
understanding of the physics of the QAHE necessary to design and develop new quantum resistance standards. Additional applications in quantum information science (QIS) can be envisioned for robust QAHE devices
-
center. Applicants are expected to be skilled in one of the programming language such as C++/C, Perl, Matlab, or R, and have majored in Chemistry, Statistics, or Computer Science. Reference Yang X, et al
-
RAP opportunity at National Institute of Standards and Technology NIST Multiplexed Biomolecular Measurements Location Material Measurement Laboratory, Biosystems and Biomaterials Division
-
to characterize 2D materials, semiconductor devices, and biological materials from DC to the THz regime. The measurements enable the engineering of dielectric, magnetic and electrical transport properties of thin