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; immunofluorescence and immunohistochemistry; proximity ligation assays; microscopy techniques (widefield, confocal, super-resolution STED, correlative light and electron microscopy, atomic force microscopy, multiplex
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shared technical platforms in mechanics, electronics and instrumentation. Where to apply Website https://emploi.cnrs.fr/Candidat/Offre/UMR8214-SANLEV-037/Candidater.aspx Requirements Research
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of view (Raman spectroscopy, scanning electron microscopy, atomic force microscopy, etc.); - Participate in progress meetings and report writing. The work will be carried out at the Laboratory
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, electronics, image and data analysis, chemistry, and biology. In this position, the successful candidate will work on the development of a novel three-dimensional single-molecule localization microscopy
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quantum sensors, leveraging state-of-the-art electron microscopy facilities at the Condensed Matter Physics and Materials Science Department (CMPMS) and the Center for Functional Nanomaterials (CFN
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: initially one year, renewable Appointment Start Date: Sept-Oct 2025 Group or Departmental Website: http://cegelskilab.stanford.edu (link is external) How to Submit Application Materials: Please email the PI
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force microscopy (AFM), advanced fluorescence and confocal microscopy, and quantitative biophysics. The project aims to elucidate how mechanical properties and forces emerge from molecular and structural
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Postdoctoral researcher (M/F), synthesis of crystal phase heterostructures by Molecular Beam Epitaxy
outcomes. Molecular beam epitaxy (MBE) growth of GaAs nanowires on patterned Si/SiO₂ substrates. Structural analysis by electron microscopy (in situ TEM, electron diffraction, zone-axis indexing). Automated
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, behavioral testing, and fiber photometry is required, as well as experience with confocal microscopy and immunofluorescence. Interested candidates should send, by March 06, 2026, to Prof. Felipe Villela Gomes
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laboratory. Transmission electron microscopy will be used for a structural, chemical, and electronic study of high electron mobility transistors (HEMTs) based on Niobium nitride (NbN) as part of this contract