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composition and atomistic modeling of materials. The main activities will include: - formulating new descriptors of critical temperature (Tc) incorporating electronic fluctuation effects, evaluated by
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/simulation programming - characterisation of various samples - supervising student (intership, PhD candidate) - writing articles - taking part in conferences This work will take place at ISMO within
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their partners by using a combination of computational analyses, single molecule imaging and molecular approaches such as Electron Microscopy. The project will be realized in collaboration with research groups
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, immunofluorescence, biochemical, and molecular approaches (qPCR, Western blot, ELISA, optical and electron microscopy). Collaborate with project partners to evaluate the mechanical and structural properties
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ExperienceNone Additional Information Eligibility criteria - PhD in theoretical chemistry or theoretical physics, with experience in methodological developments is a plus. - Solid knowledge in electronic structure
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cells) - Synchrotron measurements (e.g., diffraction, tomography, inelastic x-ray scattering, and/or absorption spectroscopy) - Measurements at X-ray Free Electron Laser (XFEL) facilities - Pulse-echo
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to contribute to the development of a regional, high-resolution (80 m) configuration of the global ECCO-Darwin model (Carroll et al., 2020; www.ecco-group.org ; https://darwinproject.mit.edu ). The selected
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facilities and those of the LNE Trappes. Where to apply Website https://emploi.cnrs.fr/Candidat/Offre/UMR8255-SEBMER-006/Candidater.aspx Requirements Research FieldPhysicsEducation LevelPhD or equivalent
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specialized training and mentoring and will be integrated into the project network. A personal computer will be made available to the researcher Where to apply Website https://emploi.cnrs.fr/Candidat/Offre
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versatile structures with numerous applications in microelectronics, MEMS (Microelectromechanical Systems), and nanotechnology. These membranes are produced by selectively etching the top silicon layer of SOI