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-insulating vertical GaN devices are a class of power semiconductor devices that utilize Gallium Nitride (GaN) material in a vertical configuration, offering significant advantages for high-voltage, high
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dynamically developed material in semiconductor industry marked by a Nobel Prize for invention of blue/white LEDs. III-N materials are currently attracting a lot of interest also for applications in power, high
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(Ga2O3) is an emerging ultrawide bandgap (UWBG, Eg=4.8–5.3 eV) semiconductor material, recently recognized as a highly promising for high-voltage and high-power applications. This material can enable solid
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(Ga₂O₃) is a novel ultra-wide-bandgap semiconductor material with a bandgap energy (Eg) of approximately 5 eV and a theoretical critical breakdown field (Ecr) exceeding 8 MV/cm, which makes it highly
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focused on the discovery and development of advanced materials for energy storage applications. Based within Applied Chemistry and Environmental Science in the School of Science at RMIT University, the role
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processes and work with International Student & Scholar Services to assure proper paperwork and compliance throughout the program. Create and communicate welcome materials for new students (e.g., new student
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for task development; f) Contribute to the production of technical and scientific communication materials for the project website and other dissemination channels; g) Participate in technical project
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recruiting 1 Doctoral Candidate (DC) to carry out research in GlycoNanoMaterials for precision delivery of genetic material to antigen presenting cells. The position will be supervised by Alexander H van
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-year PhD contract enabling the PhD candidate to develop a strong experimental expertise at the intersection of MEMS, advanced materials, and high-frequency electronics. The project is planned to start on
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Groundwater Geochemistry as Tracer of Critical Raw Materials (CRM) in the Per Geijer Mining District Luleå University of Technology experiences rapid growth with world-leading expertise within