3 switch-"https:" PhD positions at CNRS

PhD – Energy efficient memory device based on innovative Mott material: nanofabrication process development, nanocharacterization and device qualification. (M/F)

CNRS | Villeneuve la Garenne, le de France | France | about 3 hours ago

being reachable within an hour train ride). Website: https://www.iemn.fr/la-recherche/les-groupes/physique/nanostructures-qu… In the digital age, the energy consumption of microelectronic devices presents

PhD Development of new epitaxial buffer layer schemes for avalanche-capable GaN on Silicon power switching transistors M/F

CNRS | La Valbonne, Rhone Alpes | France | 2 months ago

electronic components are necessary. Thus, new components are developed from gallium nitride (GaN) to manufacture fast switches and rectifiers that can withstand high voltages for reduced component sizes

PhD position in Chemistry (M/F)

CNRS | Gif sur Yvette, le de France | France | 2 months ago

gas analysis, a GC/MS, and an HPLC/MS. DFT calculations will be performed using annual allocations on national high-performance computing centers. More details here: https://iramis.cea.fr/en/nimbe/lcmce