332 computational-physics "https:" "https:" "https:" "https:" "IFM" positions at NIST in United States
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are often destructive, insufficient in resolution and sensitivity, and are subject to bias inherent in the measurement process. New methods for quantitative, in situ characterization are essential for gaining
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RAP opportunity at National Institute of Standards and Technology NIST Inter-spin Distance Measurements in Nanobiomaterials Location Physical Measurement Laboratory, Microsystems and
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@nist.gov 240 314 6285 Description This research develops and applies hydrogen/deuterium exchange mass spectrometry (HDX-MS) for measuring the dynamics and physical-chemical properties of proteins
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process via cell banks, raw materials, or the environment. These adventitious agents can potentially cause harm to recipients. Current testing methods are very time consuming and may not detect all types
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RAP opportunity at National Institute of Standards and Technology NIST Measurement of Greenhouse Gas Emissions Location Physical Measurement Laboratory, Applied Physics Division opportunity
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the construction process and correlates to the durability and service life of the composites. The goal is to understand the interplay between structure-properties-performance within these systems
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motivated individuals with excellent communication skills and backgrounds across the physical, engineering, chemical, and biological disciplines to contribute to collaborative, interdisciplinary projects
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characterization techniques for physical and chemical properties in the complex engineered polymeric systems during their service lives in energy, infrastructure, and other applications. Both microscopic (atomic
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optical microscopes to provide physical measurements (e.g. mass, size, concentration, composition) of individual nanoparticles. We are seeking candidates with backgrounds in optics, microscopy
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and separation applications. From the crystal structure study, we can understand the fundamental physics and chemistry of these materials, in order to improve their properties for desired applications