Sort by
Refine Your Search
-
Listed
-
Category
-
Employer
- Slovak University of Agriculture in Nitra
- Institute of Electrical Engineering, Slovak Academy of Sciences
- Institute of Inorganic Chemistry, SAS
- Institute of Physics Slovak Academy of Sciences
- Faculty of Natural Sciences, Comenius University in Bratislava
- Institute for Sociology of the Slovak Academy of Sciences
- Institute of Geography, Slovak Academy of Sciences
- Institute of Materials Research of the Slovak Academy of Sciences
- Institute of Measurement Science, Slovak Academy of Sciences
- Institute of Parasitology SAS
- Matej Bel University in Banská Bystica, Faculty of Economics
- Matej Bel University in Banská Bystrica, Faculty of Economics
- 2 more »
- « less
-
Field
-
of the work deals with the growth and investigation of epitaxial III-N quantum structures prepared by metal-organic chemical-vapor deposition (MOCVD). GaN, as a constituting member of III-N family, is a most
-
. The doctoral student will obtain oil samples directly from an industrial company, where the samples will be taken from equipment operating in a production process. Within the experimental part of
-
calculations will be. The mathematical model will be defined based on the shape of the heat source and the heat flow density. At the same time, it is essential to consider the thermophysical and mechanical
-
economic (operational), environmental and social performance (triple bottom line performance). Theoretically, the work will be based not only on the theory of stakeholders (Stakeholder Theory) but also on
-
Consumption, food security and subjective wellbeing: impact of COVID-19 pandemic and Russian war in Ukraine Supervisor: prof. Ing. Ján Pokrivčák, PhD. Work place: Institute of Economic Policy and Finance
-
. The combination of GaN’s wide bandgap, high electron mobility, and semi-insulating properties results in improved performance, making vertical GaN devices an ideal choice for next-generation power systems. In
-
improvement of power electronics represents significant energy savings and reduction of carbon emissions. One of the ways to achieve higher efficiency of power electronic devices is the use of new (ultra) wide
-
of Ga2O3 and development of related electronic devices for power applications. The aim of the work will be the study and detailed characterization of the electrical breakdown of transistors and diodes based
-
semiconductors such as GaN and SiC and to enable reliable operation at voltages >6 kV, where suitable alternative is currently unavailable. Such devices are expected to find applications in high-efficiency power
-
of Statistics, Operations Research and Mathematics Field of study: Economics and Management Study programme: Agrarian Trade and Marketing Language of dissertation: Slovak, English Form of study: full-time, part