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PhD position on Suppression of rotational domain formation during heteroepitaxial growth of Ga₂O₃ by the metalorganic chemical vapour deposition (MOCVD)

Institute of Electrical Engineering, Slovak Academy of Sciences | Slovakia | 7 days ago

third of all produced electricity passes through power electronic devices at some stage before consumption with the predicted increase up to 80 % for the next decade. Therefore, even small efficiency