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or an equivalent degree in civil engineering or chemistry or chemical engineering or materials engineering. PhD degree in the field of Civil Engineering, Geodesy and Transportation or Chemical Sciences or Chemical
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the project “Centre for Credible AI at the Warsaw University of Technology”, financed through the FENG MAB programme (contract no. FENG.02.01-IP.05-0058/24). Candidates are required: 1) a PhD in Math, Computer
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FieldChemistryEducation LevelPhD or equivalent Research FieldChemistry » Structural chemistryEducation LevelPhD or equivalent Skills/Qualifications - PhD in biotechnology, chemistry, biology, or chemical engineering; - the
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at the Warsaw University of Technology”, financed through the FENG MAB programme (contract no. FENG.02.01-IP.05-0058/24). Candidates are required: 1) a PhD in Math, Computer Science, Physics, Artificial
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results to the public and scientific communities Specific Requirements Profile of candidates/requirements: Applicants must have a PhD degree in Materials Science, Chemistry, Chemical Engineering, Physics
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for laboratory needs Academic supervision of junior staff and training of new personnel Requirements: PhD degree in materials engineering, physics, mechanics, or a related discipline Scientific experience
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for the Recruitment of Researchers and the Open, Transparent and Merit-Based Recruitment of Researchers (OTM-R) Policy at the Wrocław University of Science and Technology. LINK PL: https://pwr.edu.pl/uczelnia
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without a PhD should prepare a declaration or confirmation of their viva (defense) date, support letter from an independent PhD researcher, declaration that Silesian University of Technology will be
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, specialization: computational physics, solid-state physics, optics, or PhD degree in mathematics, or PhD degree in information and communication technology • good knowledge of optics, solid-state physics
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-state physics, optics, computational physics or PhD degree in materials engineering good knowledge of optics, experimental physics, electronics, solid-state physics, technology of semiconductor lasers