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Dopant and Defect Physics for Device Optimization for Hafnium Oxide based Devices Devices realized with ferroelectric hafnium oxide are silicon compatible, power-efficient, and can be cost-effectively integrated into advanced technology nodes for sensor, nonvolatile memory, logic, and...
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to meet them: scale-up + GMP production of organoids and tumoroids - Design of the optimized functional prototype - Incorporation of microbead counting and transfer functions - Validation and qualification
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chromatography and ICP-MS/MS. At CEA, you'll put your skills and enthusiasm to work on major societal projects. As a post-doc, you will join the IRESNE team: the Institute for Research on Nuclear Systems for Low
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