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6554 LETG-Rennes (http://letg.cnrs.fr/ ) Work environment: an office and a computer at disposal. This position is located in a sector covered by the protection of scientific and technical potential (PPST
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Dopant and Defect Physics for Device Optimization for Hafnium Oxide based Devices Devices realized with ferroelectric hafnium oxide are silicon compatible, power-efficient, and can be cost
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