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validation. The postdoctoral researcher will work within the Metasurface Team at CRHEA, in close interaction with permanent researchers, postdoctoral fellows, PhD students, engineers, and external
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the supervision of students (interns and/or PhD candidates) -preparation of scientific publications and progress reports -presentation of results at national and international conferences This work will be carried
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of the fabricated samples. Research will be conducted in collaboration with PhD students and members of the Orsay group, using the expertise and manufacturing capabilities of the LPS as well as the neighbouring C2N
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validation. The postdoctoral researcher will work within the Metasurface Team at CRHEA, in close interaction with permanent researchers, postdoctoral fellows, PhD students, engineers, and external
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of contributions to the international ePIC (electron Proton-Ion Collider experiment) collaboration associated with the construction of the future Electron-Ion Collider (EIC, Brookhaven National Laboratory -BNL, New
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of nanodevices and their multiple functionalities for bio-inspired computing. The team includes two permanent CNRS researchers, two Thales researchers, 4 post-docs, and 4 PhD students. Where to apply Website https
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the project is the systematic screening of NHC SAM formation as a function of wingtip substituents, assessing how steric and electronic variations influence adsorption strength, monolayer density, order
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of Research ExperienceNone Additional Information Eligibility criteria Education - PhD in education, cognitive psychology, occupational psychology/ergonomics, educational technology, or a related field. - Dual
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) the creation of new-based DNA nanostructures as a molecular template to hold proteins to facilitate molecular imaging by single-particle Cryo-Electron Microscopy (Cryo-EM) (2) the development of DNA-based nano
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rely on the precise control and understanding of material, electronic and topological properties of 3DTIs. In this project, we propose to characterize the electronic properties of gated devices