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) — to join our team. You will be directly involved in developing and optimizing ion beam processes to improve device performance in MRAM and magnetic sensor applications. Beyond R&D, we are looking for a
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data to refine objective measures of neural function and improve clinical strategies for hearing aid optimization in this population. References: [1] A. Starr, T. W. Picton, Y. Sininger, L. J. Hood, and
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Dopant and Defect Physics for Device Optimization for Hafnium Oxide based Devices Devices realized with ferroelectric hafnium oxide are silicon compatible, power-efficient, and can be cost
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