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trials based on experimental design. Contribute to the numerical modeling of beneficiation circuits (e.g., using USIMPAC or similar software). Analyze, interpret, and report the outcomes of simulations and
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Massachusetts Institute of Technology (MIT) | Cambridge, Massachusetts | United States | about 8 hours ago
simulation tool for modelling hydrogen isotope transport in materials. The role is central to enhancing the scientific reliability and benchmarking capacity of FESTIM in support of fusion fuel cycle modelling
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candidate will play a key role in developing and advancing new models and simulations for Computational Fluid Dynamics (CFD) hypersonic codes. Specific tasks include developing new turbulence and transition
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, or a closely related field. Preferred Qualifications Demonstrated experience in continuum mechanics or statistical mechanics. Expertise in developing custom numerical solvers or using advanced
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applications for a Postdoctoral Associate position in the area of physical oceanography. The successful candidate will use numerical simulations to study the dynamics and meridional heat transport of the Agulhas
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these nanocomposites, we are looking for a postdoc to further develop high performance computing numerical methods in our state-of-the-art open source micromagnetic model, MagTense. MagTense is based on a core
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research position is available for a highly motivated individual with strong expertise in modeling and simulation of biochemical reaction systems, with a focus on mRNA production from DNA templates
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-reviewed journals, commensurate with stage of career Research skills or potential at an international level. Excellent track record of research in active matter or in the direct numerical simulations
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the supervision of Dr. Joseph Kwon. We’re seeking a creative Postdoctoral Scholar to join our team and advance cutting-edge multiscale and hybrid modeling—integrating first-principles simulations with
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representation theory, simple perturbation theory, and similar analytical tools. Molecular dynamics of semiconductor-oxide interface. Numerical simulations of the oxide condensation process based on force-field