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Structural Systems Division opportunity location 50.73.11.C0052 Gaithersburg, MD NIST only participates in the February and August reviews. Advisers name email phone Kevin Kai Fai Wong kfwong@nist.gov 301 975
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Description Our group is developing chip-scale nonlinear optical devices based on dispersion engineered waveguides in a variety of materials including silicon, silicon nitride, and AlGaAs. A major thrust for
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models intractable; 2) sensitive, deformable components that exhibit compositional disorder and nonlinear responses; and 3) active agents capable of self-propulsion, creating systems that are inherently
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nanowire devices is that many physical phenomena do not scale from the macro to nano regimes. Our research primarily focuses on nanowires grown from wide-bandgap semiconductors especially the group III
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measurements, are used to study carrier transport. Changes in linear and nonlinear optical susceptibilities in an applied DC or THz electric field are also of interest, including the Franz-Keldysh effect
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to study carrier transport. Changes in linear and nonlinear optical susceptibilities in an applied DC or THz electric field are also of interest, including the Franz-Keldysh effect. Materials of interest
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RAP opportunity at National Institute of Standards and Technology NIST Low-Damage Earthquake-Resistant Structures Location Engineering Laboratory, Materials and Structural Systems Division
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-advisor: Dr. Angela Stelson, S-parameters calibration lead. Commercial acoustic spectroscopy is stuck below 300 MHz, which limits our understanding of materials. For communications technology, the lack
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Structural Systems Division opportunity location 50.73.11.B7075 Gaithersburg, MD NIST only participates in the February and August reviews. Advisers name email phone Joseph A. Main joseph.main@nist.gov (202
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modeling is the parametrization of the force field. There are a large number of force fields in existence and significant efforts are spent on their development and improvement. However, to-date, development