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The NSLS-II is seeking an exceptional Postdoctoral Research Associate to join a collaborative research effort on developing novel methods, applicable for extreme ultraviolet lithography (EUVL
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advantageous: magnetic thin film preparation, optical and e-beam lithography, electrical transport measurements, micromagnetic calculations, and magnetic domain observation.
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of recipes in tools such as electron-beam lithography, atomic layer deposition, physical vapor deposition, reactive ion etch systems, and other etch processes. The ideal candidate must have extensive
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silicon-TCO photonic devices and subsystems using electron beam lithography, sputtering, etching, atomic layer deposition, and evaporation Characterization of high-speed optoelectronic devices using vector
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ultraviolet (EUV) lithography by synthesizing organic-inorganic hybrid thin films via atomic layer deposition (ALD) techniques, especially vapor-phase infiltration (VPI). You will explore the materials
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phase-change heat transfer, micro/nano fabrication (photo or e-beam lithography), and optical imaging. The primary responsibility is to study liquid film dynamics during phase-change processes such as
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on a vertical-cavity surface-emitting laser (spin-VCSEL) for spin-optoelectronic applications. - Fabricate spin injectors by molecular jet epitaxy or sputtering ; - Perform lithography for spin-VCSEL
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transport of orbital angular momentum currents for their use in innovative magnetic memory and computing applications. The devices will be fabricated by thin film sputtering growth and lithography in
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) biomaterials, soft lithography, and hydrogel synthesis, and (c) cell culture and molecular cell biology assays. The successful candidate is expected to publish papers in prestigious peer-reviewed journals and
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. Extension may be possible contingent upon future funding. Previous hands-on experience with semiconductor device fabrication is required. Experience working with high resolution e-beam lithography, optical