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) and its TranSIESTA functionality. SIESTA is a multi-purpose first-principles method and program based on Density Functional Theory, which can describe the atomic and electronic properties of systems
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advantages contracting some products (health insurance, childcare, training, among others.) Training activities: languages, mentoring programme, wellbeing programme. International environment Estimated
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advantages contracting some products (health insurance, childcare, training, among others.) Training activities: languages, mentoring programme, wellbeing programme. International environment Estimated
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, mentoring programme, wellbeing programme. International environment Estimated Incorporation date: March 2025 This contract has recieed funding from the European Union's Horizon Europe research and innovaation
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: languages, mentoring programme, wellbeing programme. International environment Estimated Incorporation date: April 2025 How to apply: All applications must be made via the ICN2 website and include
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competencies needed to flourish humanely and professionally. Position Location: IQS School of Engineering – Ramon Llull University, Barcelona (Spain) The ChemSynBio Group Join our dynamic ChemSynBio team, where
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holidays per year Flexible compensation plan: tax advantages contracting some products (health insurance, childcare, training, among others.) Training activities: languages, mentoring programme, wellbeing
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, graphene-based nanostructures, 2D materials, topological insulators...). This position is related to MOLESENSE (PID2022-140845OB-C63), a project within the program of the Spanish Research Agency PROYECTOS DE
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ICFO is offering a postdoctoral position to a well-qualified, highly motivated and dynamic young scientist who wishes to enhance his/her scientific career in a friendly and stimulating environment. The successful candidate will be joining the Optoelectronics group led by Prof. Dr. Valerio...
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transport of orbital angular momentum currents for their use in innovative magnetic memory and computing applications. The devices will be fabricated by thin film sputtering growth and lithography in