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: heterojunction bipolar transistors, high electron mobility transistors (HEMTs); (2) Low-power devices: novel transistors (tunneling field-effect transistors, and Non-silicon metal-oxide-semiconductor field-effect
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conditions under which difficulties occur in the syringability of suspensions characteristic of injectable formulations and develop methods to mitigate such issues. This will be achieved in part through
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Physics, Chemistry, or related fields. • A strong demonstrated background in method development in ultrafast laser spectroscopy is required. • Background in time-domain THz spectroscopy and/or 2D
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, and virologists as a member of the PCHPI center. The selected candidate will participate in the development, testing and implementation of novel computational methods that incorporate experimental data