3 finite-element-method Postdoctoral positions at University of Delaware in United States
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: heterojunction bipolar transistors, high electron mobility transistors (HEMTs); (2) Low-power devices: novel transistors (tunneling field-effect transistors, and Non-silicon metal-oxide-semiconductor field-effect
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collaboration with the MRSEC CHARM center (https://mrsec.udel.edu/). Qualifications Applicants should have a PhD in Physics, Chemistry, or related fields. A strong demonstrated background in method development in
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structural biologists, and virologists as a member of the PCHPI center. The selected candidate will participate in the development, testing and implementation of novel computational methods that incorporate
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