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III-V (AlGaAs or InP) semiconductors and SiN photonic platforms Strong background in nonlinear optics or integrated laser physics Experience with photonic device design (e.g., Lumerical, FDTD/FEM tools
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collaborators. The activities will include: • Electromagnetic modeling and numerical simulations (e.g., FDTD, FEM) • Design of metasurface architectures based on dielectric materials available at CRHEA
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systems Design and execute experiments involving ultrasonic, electromagnetic, and other NDE techniques Develop and apply computational models (e.g. FEM and/or wave propagation models) for material
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collaborators. The activities will include: • Electromagnetic modeling and numerical simulations (e.g., FDTD, FEM) • Design of metasurface architectures based on dielectric materials available at CRHEA
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(photolithography, metal evaporation, etching) Experience with packaging schemes such as flip-chip bonding, anisotropic conductive film bonding and wire bonding Finite element Method (FEM) simulations (MEMS, Electro
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Engineering of the State University of Campinas (FEM-UNICAMP). This opportunity is open to candidates of any nationality. The selected candidate will receive a FAPESP Post-Doctoral fellowship in the amount of R
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Technology. Additional Actions : Composite Materials, Finite Element Modelling (FEM), Impact Engineering, High-Rate Experimental Mechanics, AI Assisted Surrogate Modelling
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, using e.g. DFT or the finite element method (FEM) calculate the quantum dynamics of an emitter coupled to phonons with an open-quantum-system approach and using state-of-the-art numerical techniques
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hosted by the Faculty of Mechanical Engineering of the State University of Campinas (FEM-UNICAMP). This opportunity is open to candidates of any nationality. The selected candidate will receive a FAPESP
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Materials, Finite Element Modelling (FEM) Impact Engineering High‑Rate Experimental Mechanics AI-assisted surrogate modelling