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sensors based on the integration of organic light emitting diodes (OLED) onto silicon CMOS substrates. Here, our activities range from the initial idea, through design in close cooperation with the OLED
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multi-band InP mm-wave front-ends including integration possibilities with CMOS': So far wireless communications have experienced explosive growth. In last 30 years, through five generations of wireless
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-CMOS integrated circuits to interface quantum computers and quantum sensors! Job description Quantum computers promise to solve problems intractable by classical digital computers, while quantum sensors
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-CMOS integrated circuits to interface quantum computers and quantum sensors! Job description Quantum computers promise to solve problems intractable by classical digital computers, while quantum sensors
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research on biomedical sensor applications (biomedical sensor interfaces/ integrated mechanical strain sensors) analog/Mixed-Signal Integrated Circuit Design (CMOS, low-power, low-noise design) publication
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Description The Institute of Radio Frequency Engineering and Electronics conducts research in the field of integrated circuit design in state-of-the-art CMOS and SiGe BiCMOS technologies for various
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CMOS and SiGe BiCMOS technologies for various applications, such as wireless and wireline communications, satellite systems and high-accuracy radars and sensors for industrial automation. Following
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dividers/combiners, couplers, baluns, matching networks, active circuits: Power amplifiers and phase shifters RF and millimeter-wave CMOS/BiCMOS circuit design (> 30 GHz) using Cadence Proficiency in
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surpassing that of CMOS/SiGe BiCMOS based circuits. The position is a part of the Smart Networks and Services Joint Undertaking project “X Transceivers & RF front-ends made in Europe's Microelectronics light
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(e.g. quantum logics and memories, sources and detectors, etc), CMOS or FPGA technology, micro/nanofabrication, low noise high-frequency characterisation and measurements. C2 Knowledge of using high