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to preserve the internal charge and handle the output signal of the RE (buffering function, polarity and gain adjustment). More precisely, a new embedded analog system will be developed, tested and evaluated
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-effectively integrated into advanced technology nodes for sensor, nonvolatile memory, logic, and neuromorphic applications. Currently, hafnium-zirconium mixed oxide (HfxZr1-xO2) offers the widest stoichiometry
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