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engineered heterostructures with unconventional merging of functional materials to develop a new generation of sensors and quantum devices. Devices based on the synergetic combination of oxide ferromagnetic
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topological textures. A wide range of applied functionalities could be considered: terahertz sources, unconventional computing and AI, security components, telecommunications, sensors, memories etc.
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) — to join our team. You will be directly involved in developing and optimizing ion beam processes to improve device performance in MRAM and magnetic sensor applications. Beyond R&D, we are looking for a
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